Abstract
Deep impurity levels in InP LEC single crystals have been investigated by deep-level transient spectroscopy (DLTS) and photoluminescence (PL) measurements. The effects of heat treatment on DLTS and PL signals have been investigated, the results indicating that a deep impurity level whose emission activation energy is 0.42 eV is closely related to the well-known PL emission band at 1.1 eV. It seems that these DLTS and PL signals originate from a certain complex including P vacancies and defects, since some behaviours of these signals can be well explained by a configuration-coordinate model. Two other deep levels with emission activation energies of 0.31 and 0.60 eV have also been observed. The origin of these deep impurity levels might be due to native defects in the InP LEC crystals.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
