Abstract
Deep hole traps in boron-doped diamond epitaxial layers are studied by means of several types of deep-level transient spectroscopy and density-functional theory calculations. Standard deep-level transient spectroscopy and high-resolution isothermal transient spectroscopy permit to identify nine deep hole traps. Their capture cross-sections and ionization energies are systematically determined. In parallel, the ionization energies of donor and acceptor levels related to boron- and/or hydrogen-related complexes in diamond are assessed by ab initio calculations in this work and summarized with others from the literature including native defects. Tentative assignments of the measured deep hole traps to the calculated ones are proposed.
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