Abstract
AbstractTrench formation for device isolation on GaN light‐emitting diode (LED) wafers via nanosecond ultraviolet laser micromachining is demonstrated. Owing to the dissimilar ablation thresholds between GaN and sapphire, the etch process terminates automatically at the GaN/sapphire interface. It was found that optimal focus offset, optimal pulse energy and high repetition rate are essential for obtaining a trench with tapered sidewall and smooth bottom surface, which is suitable for the conformal deposition of interconnects across the trench. This technique has been successfully applied to the rapid prototyping of interconnected LED arrays on a single chip. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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