Abstract
Metal–semiconductor contacts are used to examine deep electronic states near the (In,Ga)P surface by deep-level transient Fourier spectroscopy. Towards the as-grown (In,Ga)P surface, the In mole fraction increases due to parasitic indium deposited from the horizontal reactor during cooling after growth. This process is accompanied by compressive strain, which leads to the formation of several deep-level defects near the surface of Si- as well as Zn-doped (In,Ga)P layers and their successive diffusion into the epitaxial layer. In contrast, Si-doped (In,Ga)P capped by a GaAs layer is practically free of deep-level defects. In the bulk of Zn-doped layers, a dominant hole trap is found at 0.91eV with or without a GaAs cap layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
