Abstract
In recent times, 3C-SiC is gaining more and more interest in terms of applications for optoelectronics and quantum computing. Cubic SiC exhibits a number of luminescent defects in the near infrared originating from deep electronic levels. Temperature dependent photoluminescence measurements were conducted on n-type and p-type 3C-SiC in order to investigate the formation of dopant related point defects as well as intrinsic point defects and defect complexes. The results indicate a number of VSi, VC and VCCSi related defects which might be suitable candidates for future optoelectronic applications.
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