Deep Electron Traps in CdTe:In Films Grown by Molecular Beam Epitaxy

Abstract

N-type indium doped CdTe grown on n+-GaAs by molecular beam epi- taxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiketric conditions may point out that the observed defect is resonant with the conduction band. PACS numbers: 68.55.Ln, 73.61.Ga Any intentional doping of semiconduction may lead to a formation of un- desired deep electronic states associated with point defects. The presence of deep states influences properties of the doped material and affects the performance of devices fabricated from it. Thus, an issue of primary importance is to develop such growth techniques which can eliminate deep states, or at least, which result in reducing their number in the material. In two recent publications we have reported on the molecular beam epitaxy