Abstract

AbstractElectron traps in indium doped Cd0.93Mn0.07Te were studied with Deep Level Transient Spectroscopy. Five electron traps were found (labeled as E1 ‐ E5). Energy levels ET of related defects are equal to E T 1 = 0.09 eV, E T 2 = 0.12 eV, E T 3 = 0.18 eV, E T 4 = 0.56 eV and E T 5 = 0.65 eV. Three of them (E1, E2, E3 ) are related to the defects with thermally activated capture cross section. Electric field enhanced electron emission from the trap E4 was observed and described in the terms of the Poole‐Frenkel ‐ mechanism. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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