Abstract

AbstractElectron traps in indium doped Cd0.93Mn0.07Te were studied with Deep Level Transient Spectroscopy. Five electron traps were found (labeled as E1 ‐ E5). Energy levels ET of related defects are equal to E T 1 = 0.09 eV, E T 2 = 0.12 eV, E T 3 = 0.18 eV, E T 4 = 0.56 eV and E T 5 = 0.65 eV. Three of them (E1, E2, E3 ) are related to the defects with thermally activated capture cross section. Electric field enhanced electron emission from the trap E4 was observed and described in the terms of the Poole‐Frenkel ‐ mechanism. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.