Abstract
Temperature-dependent electron transport properties in electron accumulation layers of InN are quantified by using the multilayer model. Room temperature electron densities in the electron accumulation layers are 5.83 × 1013 and 3.26 × 1014 cm−2 with Hall mobilities of 429 and 149 cm2/Vs in In- and N-polarity InN, respectively. A deep donor state with an activation energy of ∼80 meV, which is previously believed to exist in the InN bulk layer, is found to actually locate in the electron accumulation layers. The InN bulk layer shows single-shallow-donor behavior and its temperature-dependent electron mobility is in good agreement with the ensemble Monte Carlo simulation results.
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