Abstract
The photoluminescence spectrum of GaAs(Cr, Si) is studied over a wide range of Cr and Si doping levels. The 0.84 eV line associated with an internal (5E to 5T2) transition of Cr2+ disappears in sufficiently n-type (Ne>or approximately=1*1017 cm-3) material due to the conversion of all the chromium into the Cr1+ charge state.
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