Abstract
The deep centers inAlGaAs/GaAs graded index-separate confinement heterostructure single quantum well (GRIN-SCHSQW) laser structures grown by MBE and MOCVD have been investigated using deep level transient spectroscopy (DLTS) technique. The majority and minority carrier DLTS spectra show that the deep (hole and electron) traps (H1 and E3), having large capture cross sections and concentrations, are observed in the gradedn-Al x Ga 1 − x As layer of laser structures in addition to the well-known DX centers. For laser structures grown by MBE, the deep hole trap H1 and the deep electron trap E3 may be spatially localized in the interface regions of discontinuous variation Al mole fraction of then-Al x Ga 1 − x As layer with x = 0.20−0.43. For laser structures grown by MOCVD, the deep electron trap E3 may be spatially localized in then-Al x Ga 1 − x As layer with x = 0.18−0.30, and the DX center may be spatially localized in the interface regions of discontinuous variation Al mole fraction of theAl x Ga 1 − x As layer with x = 0.22−0.30.
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