Deep carrier traps in as grown isotopically pure 28Si FZ crystal

Abstract

We studied a distribution of dopants and carrier traps in the FZ grown 28Si crystal. Samples cut‐out from various parts of an as‐grown crystal were analysed by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Several traps were detected at the concentration level of ∼1010 cm−3 by DLTS. Careful analyses of the obtained signals allow attributing the related traps to agglomerates of intrinsic defects. A correlation of the trap concentration to the phosphorus doping, detected by PL and confirmed by electric measurements was also observed. A possible attribution of the traps to the previously reported defects will be discussed.