Abstract
This paper presents deep boron diffusion induced damages in silicon (100), (110) and (111) surfaces. The silicon (100) and (110) samples showed a broad hump at the higher angle (ω) side during x-ray Rocking curve measurement; whereas, the (111) sample shows an additional broad peak at higher angle side. All the diffused samples showed two distinct contours in reciprocal space mapping measurements. Due to the diffusion process, surface roughness of the silicon samples is found to be increased from 10nm to 110nm, 70nm and 30nm for the silicon (100), (110) and (111) samples respectively.
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