Abstract
Abstract A study of silicon anisotropic etching in SF 6 /Ar/O 2 -based plasma has been performed in a surfatron reactor excited at 2.45 GHz with independent radio-frequency biasing at 13.56 MHz. Emphasis is put on the comparison of profiles and etch rates obtained with different percentages of oxygen added to the mixture as a function of substrate temperature. Good results are obtained with 15% O 2 and a substrate temperature of −30 °C, allowing a depth of 100 μm to be etched.
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