Abstract
Local Deep-Amorphization (DA) and subsequent Solid-Phase Epitaxial Regrowth (SPER) are envisioned for the co-integration of devices with hybrid surface orientation. The impact of these processes on the electrical characteristics of p-channel MOSFETs with 20nm thick film and HfO2 gate insulator/metal gate along the 〈110〉 direction on a (110) substrate is studied. No deterioration of transconductance and subthreshold swing at the front or back channels was induced by DA/SPER. The transconductance enhancement for the front and back channels on (110) substrates reaches +200% and +230% gain, respectively. For these transistors, we also discuss the variation of the external resistance and their operation in double-gate mode.
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