Abstract
A novel polysilicon vertical thin film transistor (VTFT) has been fabricated based on a low-temperature (T{less than or equal to}600{degree sign}C) process. This new structure eliminates the large overlapping area between source and drain, and thus reduced the off-current and increased the Ion/Ioff ratio. The technologically key point lies in the introduction of an insulating layer between source and drain, and the electrical properties of the fabricated VTFTs using different insulating layers are compared. These first results highlight that the SiO2 insulating layer shows great advantages over the Si3N4 insulating layer. The reduced off-current has revealed some potential applications for high density integration and high drive current.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
