Abstract
Resistance change random access memory devices using NiOx films with resistance switching properties have immense potential for high-density nonvolatile memory exceeding currently used flash memory. The only critical failure of a NiOx film is to write wrong information due to large fluctuations of switching voltages during successive resistance switching operations. The authors show that failure-free NiOx film can be grown directly on Pt electrode just by process control. Intensive analyses show that the superior resistance switching behaviors of their simple Pt∕NiOx∕Pt structure may result from a very thin Ni–Pt layer self-formed at the bottom interface during deposition of NiOx.
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