Abstract
The decrease mechanism of plasma-induced surface states in a GaAs metal-semiconductor field-effect transistor (MESFET) during high temperature operation has been studied by means of high temperature operational tests, drain current transient analysis and three-terminal gate current measurements. The energy level of trapped electrons in the surface states distributes widely in the band-gap, and its activation energy does not change after decreasing the density of surface states. In order to decrease the surface states effectively, hot-carriers generated by accelerated channel electrons under high temperature operation are required.
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