Abstract
We create GeTe/Sb2Te3 multilayer thin films by alternating GeTe and Sb2Te3 to enhance thermoelectric properties. Crystal structure of the sample was characterized from amorphous to crystalline via annealing. The GeTe/Sb2Te3 multilayer thin film can significantly improve thermopower factor from ∼0.1 μW/mK2 to 815.1 μW/mK2 because the interfacial effect breaks down the trade-off between Seebeck coefficient and conductivity. GeTe/Sb2Te3 exhibits high Seebeck coefficient while maintaining large electrical conductivity under proper annealing at 575 K. Thus, a high power factor of 815.1 μW/mK2 obtained by the multilayer structure, which blocks carriers and rationally tunes the carrier density, leads to an enhanced Seebeck coefficient and power factor for thermoelectric devices. Improvement of electrical conduction originates from interfacial bonding and intermixing at a particular thickness ratio during element diffusion process. Results of microstructure characteristics revealed that the existence of hexagonal Ge2Sb2Te5 phases may drive the improvement of thermoelectric performance and provide us with a new way of enhancing thermoelectric devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
