Abstract
A new technique of gold nanoparticle (AuNP) growth on the sidewalls of WS2 inorganic nanotubes (INT-WS2) and the surface of MoS2 fullerene-like nanoparticles (IF-MoS2) is developed to produce metal–semiconductor nanocomposites. The coverage density and mean size of the nanoparticles are dependent on the HAuCl4/MS2 (M = W, Mo) molar ratio. AuNPs formation mechanism seems to involve spatially divided reactions of AuCl4– reduction and WS2/MoS2 oxidation taking place on the surface defects of the disulfide nanostructures rather than directly at the AuNP-INT/IF interface. A strong epitaxial matching between the lattices of the gold nanoparticles and the INT-WS2 or IF-MoS2 seems to suppress plasmon resonance in the nanocomposites with small (<10 nm mean size) AuNPs.
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