Abstract
It is shown that ESR spectra of dangling bonds in a-Si:H for glow discharge samples are deconvoluted into two components due to normal dangling bonds and H-related dangling bonds. The component for H-related dangling bonds has anisotropic g -values and anisotropic hyperfine coupling constants of 1 H. The distance between the dangling bond site and hydrogen site is estimated to be 2 A, using a tight binding theory. The normal dangling bonds constitute about 60% of the total spin density, while the H-related dangling bonds give about 40% for glow discharge samples. The glow discharge samples were also illuminated by a xenon lamp with 600 mW/cm 2 at room temperature. The normal dangling bonds and H-related dangling bonds are created almost equally by illumination.
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