Abstract
This article presents a method for decomposition of complex luminescence spectra, which makes it possible to determine with high accuracy the number and position of the maxima of elementary components in the integrated spectrum. Decomposition method is based on the basic properties of Gaussians (curves that have form exp(-x2)). Testing of the method, as well as determining the range of its applicability, was carried out by means of a synthetic experiment. The results of the decomposition of the complex spectra of AIIBIV semiconductor compounds are presented. On the basis of the data obtained, conclusions are drawn about the possible causes of changes in the fine structure of the integrated spectra. An example of using decomposition to determine the degree of inhomogeneity in the crystal lattice of crystal phosphorus is given.
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