Abstract
In this study, an axisymmetric Czochralski furnace model for the LEC growth of gallium arsenide is presented. We produced 88 datasets through computational fluid dynamics simulations. Among the many parameters that affect crystal growth, a total of 13 input parameters were selected, including the geometry and material parameters of the hot zone (crucible, heaters, radiation shield, and crystal), as well as the process parameters (such as pulling and rotation rates, heating power, etc.). Voronkov criteria (v/Gn), interface deflection, and the average interface temperature gradient were selected as the output parameters. We carried out a correlation analysis between the variables and used decision trees to study the impact of the 13 input variables on the output variables. The results indicated that in the growth of gallium arsenide, the main factor affecting interface deflection and the average interface thermal gradients is the crucible rotation rate. For v/Gn, it is the pulling rate.
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