Decay of excess carrier concentration in thermally treated silicon

Abstract

At T = 77 to 425 °K and ti = 0.03 and 5.0 μs investigations of excess carrier decay in thermally treated Si were made. An analysis of the photoconductivity kinetics and photoluminescence decay on temperature and exciting light intensity showed that high temperature heat treatment introduces in Si a complex system of fast (s) and slow (r) recombination centres with widely different cross sections for the capture of majority carriesrs. The main recombination parameters (energy position, concentration, electron and hole capture coefficients) and the schme of electron transitions via s- and r-centres were determined. [Russian Text Ignored]