Decay behaviour of high‐excitation luminescence in Gap:N II. Experimental results on the densities of the coexisting phases and the relevant recombination processes

Abstract

AbstractThe radiative recombination of isoelectronic nitrogen‐doped GaP is investigated under high optical excitation at several temperatures (T = 2, 4.2, 27, and 77 K). A previously reported phase seperation is confirmed. The parameters of the electron—hole liquid and the coexisting low‐density phase are determined both from luminescence spectra and decay measurements. The dominating recombination processes for the carrier system are found to be phonon‐assisted band‐to‐band Auger recombination, phononless radiative recombination with participation of the nitrogen impurities, and phononless Auger recombination with participation of the nitrogen impurities. The respective rate coefficients are determined.