Abstract
Secondary electron (SE) imaging in a scanning electron microscope is used to map electrically active dopant distributions of B-doped superlattices in Si. By comparing SE contrast profiles with secondary ion mass spectroscopy data, it is shown that B is electrically deactivated when the damage caused during Si implantation falls onto a doped region. Following a 450 °C anneal, the effect of the implantation damage is severely reduced in the SE profiles and the B is partially reactivated. An 815 °C anneal results in transient enhanced diffusion of some of the B with the remainder trapped in an inactive immobile peak.
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