Abstract
Self-driven narrowband perovskite photodetectors have recently attracted significant attention due to their simple preparation, high performance, and amenability for system integration. However, the origin of narrowband photoresponse and the related regulation mechanisms still remains elusive. To address these issues, we herein perform a systematic investigation by formulating an analytic model in conjunction with finite element simulation. The optical and electrical simulations have resulted in design principles for perovskite narrowband photodetectors in terms of the dependence of external quantum efficiency (EQE) on perovskite layer thickness, doping concentration, and band gap as well as trap state concentration. Careful investigations on the profiles of electric field, current, and optical absorption reveal the dependence of narrowband EQE on the direction of incident light and perovskite doping types: only p-type perovskite can yield the narrowband photoresponse for illumination from the hole transport layer (HTL) side. The simulation results demonstrated in this study shed new light on the mechanism of perovskite-based narrowband photodetectors and provide valuable guidance for their design.
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