De Haas–van Alphen effect in [formula omitted] under pressure

Abstract

We have carried out the de Haas–van Alphen (dHvA) experiment of an antiferromagnet CeRhIn 5 under pressure. The detected dHvA branches α i ( i = 1 , 2 , 3 ) and β 2 at ambient pressure are well explained by the corresponding dHvA branches in LaRhIn 5 , indicating that the f electron is localized at ambient pressure. At 2.9 GPa, where the antiferromagnetic ordering disappears completely, a new branch α i ( i = 1 , 2 , 3 ) appears. This is approximately the same as that of 4f-itinerant Fermi surface in CeCoIn 5 , suggesting that the 4f electronic state is changed into an itinerant one.