De-embedded ultra-low noise 0.1 [micro sign]m gate length Ge/Si0.4Ge0.6 p-MODFET

Abstract

De-embedded high frequency (HF) noise parameters of Ge p-channel modulation doped field effect transistors (MODFETs) on a Si0.4Ge0.6 virtual substrate have been determined for the first time. The 0.1 × 100 µm devices have a minimum noise figure NFmin = 0.3 dB (0.5 dB) ± 0.2 dB, a noise resistance Rn = 95 Ω (90 Ω) ± 5 Ω, an optimum reflection coefficient Γopt = 0.7∠6° and an associated gain Gass = 14 dB (13 dB) at 1.2 GHz (2.5 GHz), at a bias corresponding to the optimum unity current-gain frequency fT = 55 GHz and the maximum oscillation frequency fMAX = 135 GHz. Noise results are given in the 1.2–12 GHz frequency range and 20–160 mA/mm current range.