DCR: Deterministic Crash Recovery for NAND Flash Storage Systems

Abstract

NAND flash memory has been widely adopted as the storage medium. As power failure may occur at any time and result in data loss, crash recovery becomes vitally important in NAND flash memory storage systems. Since flash translation layers (FTLs) are used to manage flash memory, the crash recovery problem in NAND flash is how to efficiently and effectively recover FTL metadata with consistency after system crash. In this paper, we present deterministic crash recovery (DCR) that adopts a deterministic approach for crash recovery in NAND flash storage systems. The basic idea is to exploit the determinism of FTLs and reproduce events that happened between the last checkpoint and the crash point during crash recovery. Different from existing approaches that need to scan the whole flash memory chip, DCR can recover the system more efficiently by only checking a limited number of blocks based on deterministic FTL operations. We have implemented DCR in an FTL and compared it with the representative version-based and power loss recovery schemes based on an ARM-based embedded system. Experimental results show that DCR can greatly reduce the recovery time and guarantee the consistency of FTL metadata after recovery.