Abstract
AbstractThe realization of wideband amplifiers with shunt‐series shunt‐shunt dual‐feedback configuration with commercially available 0.35‐μm SiGe BiCMOS technology is reported. The SiGe HBT used here has ft of 67 GHz and BVceo of 2.5 V. The experimental results show that power gain is 10 dB from DC to 12 GHz for a shunt‐series shunt‐shunt wideband amplifier, with the help of the emitter capacitive peaking technique. Input‐ and output‐return losses are better than 10 dB for the same frequency range. Noise figure increases from 8 to 12 dB for frequencies from 1 to 18 GHz. OP1dB and OIP3 are 0 dBm and 12 dBm at 1 GHz, respectively. Total current consumption is 11 mA at 3.3 V supply voltage. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 518–520, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20021
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