Abstract

We describe the design of an inductor-capacitor (LC) network to increase the isolation of a dc SQUID phase qubit from its current bias leads and thereby increase the relaxation time T1 and coherence time T2. One junction in the SQUID acts as an ideal phase qubit while the second junction and the SQUID loop inductance act as a broadband inductive filter to isolate the first junction from the current bias leads. The LC isolation network provides an additional isolation factor at the junction plasma frequency and allows flexibility in the choice of SQUID parameters. Our thin-film on-chip LC isolation network has a 10 nH inductor and an 80 pF capacitor. The combination of the broadband filter and LC filter provides a maximum nominal isolation factor of about 108 at a qubit plasma frequency of about 6.7 GHz. To reduce dielectric loss and two level systems in the qubit junction, we use a relatively small area (4 mum2) Al/AlOx/Al qubit junction built on sapphire and add an external capacitor with 100 nm thick SiNx dielectric layers. Measurements revealed Rabi oscillations with an envelope decay time constant of about 42 ns, and an energy relaxation time of 32 ns, consistent with a loss tangent tan(delta)=7times10-4 in the SiNx.

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