Abstract
In this study, we investigated the electrical properties of DC sputtered amorphous In–Sn–Zn–O (a-ITZO) thin-film transistors (TFTs) fabricated under various process conditions. Fabricated a-ITZO TFTs achieved a threshold voltage (VT) of 1.0V, subthreshold swing (SS) of 0.38V/dec and field-effect mobility (μeff) of around 30cm2/Vs. An analytical field-effect mobility model is proposed for a-ITZO TFTs with key parameters extracted using different methods. The impacts of a-ITZO channel thickness and oxygen gas flow ratio on device performance were evaluated. Finally, the a-ITZO TFT bias-temperature stress (BTS) induced electrical instability was studied. In comparison to amorphous In–Ga–Zn–O (a-IGZO) TFTs, improved electrical stability was observed for a-ITZO TFTs using exactly the same BTS conditions.
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