Abstract
We report on the dc and small-signal characteristics of 0.1 /spl mu/m AlSb/InAs HEMTs. These recessed-gate devices have an In/sub 0.4/Al/sub 0.6/As/AlSb composite barrier above the InAs quantum well and a p/sup +/ GaSb layer within the AlSb buffer layer. The devices exhibit a transconductance of 600 mS/mm and an f/sub T/ of 120 GHz at V/sub DS/=0.6 V. An intrinsic f/sub T/ of 150 GHz is obtained after removal of the gate bonding pad capacitance. 0.5 /spl mu/m HEMTs on the same wafer exhibit a transconductance of 1 S/mm and an intrinsic f/sub T/Lg product of 50 GHz-/spl mu/m. At 4 GHz, the 0.1 /spl mu/m HEMTs have a minimum noise figure of 1 dB with 14 dB associated gain at V/sub DS/=0.4 V.
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