DC, small-signal, and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristics

Y Ando,T Itoh

doi:10.1109/16.43802

DC, small-signal, and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristics

Y Ando, T Itoh

https://doi.org/10.1109/16.43802

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Journal: IEEE Transactions on Electron Devices	Publication Date: Jan 1, 1990
Citations: 48

Affiliation: NEC (Japan)

#Two-dimensional Electron Gas Field-effect Transistors #Characteristics In Field-effect Transistors + Show 8 more

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Abstract

A practical model for DC, small-signal, and noise characteristics in two-dimensional electron gas field-effect transistors is discussed. The model includes accurate charge-control characteristics based on analytical functions relating carrier concentration to Fermi level. This model allows the influence of drain current, frequency, and device parameters on the noise figure (NF) to be studied. The theory explains the experimentally observed trend in NF behaviors.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

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