Dc responsivity of proximity effect bridges to high frequency radiation

Abstract

The effect of microwave radiation on the dc current-voltage characteristic of proximity effect bridges has been studied at frequencies of 10, 35, and 90 GHz. The properties of bridges fabricated in layered films of Nb and Ta are reported. The fraction, epsilon, of the incident radiant power absorbed by the bridge is measured calorimetrically, permitting determination of the intrinsic responsivity (volts per watt of power absorbed when operated in a current-biased mode). In the test geometry employed, epsilon is typically about .0001 for a 0.1 ohm Nb-Ta bridge, and increases roughly linearly with dc junction resistance. Broad-band responsivity is generally independent of incident power, increases with increasing critical current (decreasing temperature), and decreases with increasing frequency. Peak responsivities achieved to date are about 100,000 V/W (absorbed) at 10 GHz and about 100 V/W (absorbed) at 90 GHz.