Abstract
A DC micro plasma jet for local micro deposition of a:C-H film in the ambient vacuum of scanning electron microscope (SEM) chamber is proposed. Acetylene (C2H2) gas was locally fed into the chamber through an orifice shaped gas nozzle (OGN) at 6.6 sccm in flow rate by applying 80 kPa-inlet pressure with an additional direct pumping system equipped on the SEM chamber. As a cathode, a cut of n-type silicon (Si) wafer was placed right in front of the OGN at 200 μm gap distance. By applying a positive DC voltage to the OGN, C2H2 plasma was generated locally between the electrodes. During discharge, the voltage increased and the current decreased due to deposition of insulating film on the Si wafer with resulting in automatic termination of discharge at the constant source voltage. A symmetric mountain-shaped a:C-H film of 5 μm height was deposited at the center by operation for 15 s. Films were deposited with variation of gas flow rate, gap distance, voltage and current, and deposition time. The films were directly observed by SEM and analyzed by surface profiler and by Raman spectroscopy.
Highlights
Thin film deposition has played an important role in many industrial applications such as semiconductor devices, electronic components, and tribological coating [1,2,3]
Among many methods for thin film deposition—for example: chemical vapor deposition (CVD) [4], spin coating [5], and thermal evaporation [6]—micro plasma jet has been promoted as a special technique for micro deposition owing to its many advantages such as high plasma density, fast convection flow, miniature geometry, and flexible operation [7]
A DC micro plasma jet in a vacuum environment of an scanning electron microscope (SEM) chamber has been applied to local CVD AprDocCesms iwcriothpilnassmitaujeotbisneravvataicounu. mByenuvsiinrognamnenortiofifcea-nshSaEpMedchgaams bneorzhzlaes abseeann aapnpoldieed, atohliogchal dCenVsDityprgoacsesjestwwitihthina smituicroobsdeiravmaetitoenr. wBaysussuinccgesasnfuolrlyificfoer-smheadpeidn gvaascunuomzzlwe iatsh aan gaansodfleo,wa rhaitgeh edneonusgihtytogakseejept twheithhigahmviaccruoudmiamleveetel.r Hwyadsrosugeccneastsefdulalymoforrpmhoeudsicnarvbaocnuufimlmw(ait:hC-aH)gawsafslolowcarlalyte enough to keep the high vacuum level
Summary
Thin film deposition has played an important role in many industrial applications such as semiconductor devices, electronic components, and tribological coating [1,2,3]. We have been developing micro plasma jet operated under the vacuum environment in the scanning electron microscope (SEM) chamber. The advantages of micro plasma processing in SEM are easy ignition of discharge by electron beam and in situ observation of material surface. For operation of gas discharge in SEM chamber, it is necessary to supply sufficient pressure of discharge gas while the ambience should be kept at high vacuum for SEM operation. The. MicromFaocrhinoeps e20r1a7t,io8,n21o1f gas discharge in SEM chamber, it is necessary to supply suffi2coiefn12t pressure of discharge gas while the ambience should be kept at high vacuum for SEM operation. How the micro plasma jet CVD works as a local thin fifilm ddeepposition technique in SEM isisdedmemonosntrsatrtaetde.dT.hTehcehacrhacatrearcitsetircistoicfseloecftreilceacltdriicsaclhadrigsechinarmgeicrion pmlaiscmroa jpetlaasnmdathjeetpraonpdertihees pofrodpeeprotiseitsedoffildmespwoseitredstufidlmiesd weitrhevsatruidatiieodn wofitehlecvtaroridaetigoanpodfisetalencctero, diescghaaprgdeicsutarnrecnet,, discharge vcuorltraegnet, danisdchdaerpgoesvitoioltnagteim, aen.dDdeeppoossitietidonthtiinm-fie.lmDsepwoesriteedextahminin-feildmusswinegreinexsiatmu iSnEeMd uosbinsegrvinatsioitnu, SsuErMfacoebpserrovfialteiro,na,nsdurRfamceapnrsopfielectrr,oasncdopRya.man spectroscopy
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