DC Magnetron Sputtering Particle Distribution and Energy Simulation Study

Abstract

Magnetron sputtering coating technology is widely used in the semiconductor, chip preparation and solar cell industries due to its high purity of film layers and the ability to prepare thin films of most materials. Factors such as magnetic field distribution, plasma density distribution and working argon pressure and temperature can directly affect the quality of thin film deposition. Therefore, the study of the particle distribution within the plasma during magnetron sputtering is very important. In this paper, a cylindrical sputtering device is established based on the fluid model with reference to the dimensional shape in practical applications. The magnetic field simulation is based on the equivalent magnetic charge model, and the magnetic field intensity distribution is solved by the finite element method, and the discharge mechanism of the plasma is studied by electron drift as well as heavy particle transport. At a distance of 15-30mm from the pole plate, the magnetic induction strength is 20-50mT. The distribution, distribution and order of magnitude of electrons, ions and substable ions at different argon pressures are considered under a uniformly distributed magnetic field distribution, while the sputtering energy of the particles reaching the target is simulated. The system reaches a steady state after 0.1 ms, where the electrons are confined by the magnetic field and mainly distributed near the cathode, thus the ion density is higher here, which is favorable for further sputtering processes. As the working argon pressure increases, the distribution of sputtered atomic streams widens in both directions with the distribution peak, and the target etching morphology tends to be homogeneous. At 5 Pa, the energy utilization decreases compared to 1 Pa.