DC magnetron reactively sputtered indiumtinoxide films produced using argonoxygenhydrogen mixtures

Abstract

Transparent conducting indiumtinoxide films have been produced by DC magnetron reactive sputtering of an indiumtin target using argonoxygenhydrogen sputter gas mixtures. The addition of hydrogen to the sputtering gas significantly broadens the process window for production of transparent ITO of resistivity <10 −3 Ω cm for substrate temperatures 20–200°C. For higher substrate temperatures (∼ 350°C) the process window is broadened slightly. Electrical and optical properties, and degradation of ITO films of various thickness deposited onto soda glass, silica and polyester are discussed in detail.