Abstract
Spin defects existing in van der Waals materials attract wide attention thanks to their natural advantages for in situ quantum sensing, especially the negatively charged boron vacancy (VB-) centers in hexagonal boron nitride (h-BN). Here we systematically investigate the laser and microwave power broadening in continuous-wave optically detected magnetic resonance (ODMR) of the VB- ensemble in h-BN, by revealing the behaviors of ODMR contrast and line width as a function of the laser and microwave powers. The experimental results are well explained by employing a two-level simplified model of ODMR dynamics. Furthermore, with optimized power, the DC magnetic field sensitivity of VB- ensemble is significantly improved up to 2.87 ± 0.07 μT/. Our results provide important suggestions for further applications of VB- centers in quantum information processing and ODMR-based quantum sensing.
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