Abstract
Amorphous Si3N4-C[Am.CVD-(Si3N4-C)] composites containing 0.07 to 6wt % carbon were prepared on a graphite substrate by chemical vapour deposition using SiCI4, H2, NH3 and C3H8 as the source gases. The d.c. electrical conductivities of the Am.CVD-(Si3N4-C) composites in the directions perpendicular (σ⊥) and parallel (σ‖) to the substrate were measured. The variation ofσ⊥ with temperature in the range 250 to 950° C, and also the difference betweenσ⊥ andσ‖ at room temperature, were investigated. Theσ⊥ of the Am.CVD-(Si3N4-C) composites containing 0.2 wt % or more carbon was 109 to 1010 times greater than that of amorphous CVD-Si3N4 at a temperature of about 500° C, andσ‖ was 10 to 30 times greater thanσ‖ at room temperature. The activation energy for electrical conduction obtained from the measured temperature dependence of theσ⊥EτT for the electrically conductive Am.CVD-(Si3N4-C) composites was 0.02 to 0.06 eV. This result suggests that the electricity is conducted through a carbon network in the amorphous Si3N4 matrix.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
