Abstract
The electrical properties of Ge 5As 38Te 57 have been carried out as a function of temperature at different dc electric fields for the bulk and thin films. This material shows a non-ohmic behaviour by switching to a negative resistance state. The activation energy was found to decrease slowly as the electric field increases and increases again before switching to the negative region. The conduction is simply a field-dependent hopping mobility at low fields. The high-field conduction mechanisms have been explained in terms of the Poole–Frenkel effect and Schottky emission of carriers which is applicable to both bulk and thin films.
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