Abstract
DC drift of unbuffered dc bias electrode port of x-cut LiNbO/sub 3/ (LN) modulators is investigated. Unlike buffered LN modulators, their dc drift is irreversible and relatively suppressed after biased aging. Additionally, they show rolling-over-type drift and do not drift divergently. Extended temperature-voltage accelerated drift tests find temperature activation energy of 1.2 eV and a proportional relationship between drift rates and initially applied bias voltages. Such drift behaviors characteristic of unbuffered x-LN can demonstrate their high reliability with respect to dc bias drift.
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