Abstract
The dc electric conduction behavior of amorphous GeSe films sandwiched between the Pt bottom electrode and various counter electrodes (Pt, Cr, and Ti) was examined in a voltage as well as a time domain. The time domain investigation identified time-dependent resistance change and relaxation. The voltage domain analysis revealed that the current transport in these metal-insulator-metal junctions is probably attributed to bulk-limited band-conduction due to delocalized charge carriers.
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