Abstract
MgAl2-2xMn2xO4 (MAMO) with x = 0-0.12 was synthesized in a single-phase form by solid-state reaction. XRD analysis showed that the samples had the cubic center structure of the Fd-3 m space group. Electrical properties of the samples were studied over the temperature range of 300 K∼1073 K. The results showed that the DC conductivity (σDC) increased from 10−11S/cm at 300 K (MAMO, x = 0) to 10-3S/cm at 1073 K (MAMO, x = 0.12). The equivalent circuit of the complex impedance spectra suggested that the relaxation of charge carriers was of non-Debye type. The conduction was mainly caused by grain boundaries and the capacitance was mainly attributed to polarization. The complex permittivity values (ε’ and ε’’) were increased by two orders of magnitude with the increase in Mn content and temperature over the measured frequency range (1 Hz-1 MHz). Therefore, doping with Mn could be applied to modify the electrical properties of MAMO at high temperature.
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