Abstract
A technology of isoplanar integrated injection logic (I3L) is discussed. High packing density and high performance are achieved in this approach by use of various process innovations combined with topological design variations. The processing and DC characteristics of I3L structures integrated with common analogue circuit elements are studied. In this linear compatible I3L technology, inverted gain of 25 at 120 μ A collector current has been achieved with 8 x 8 μm2 collector area. Current gain of 45 and f T of more than 6 GHz are obtained with the analogue circuit transistor.
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