Abstract
AbstractThe dependence of DC operating characteristics on the device dimensions in AlGaN/GaN HEMTs is systematically obtained varying the device parameters in relatively wide range. The maximum transconductance gm,max and the maximum drain current ID,max depend on both the source‐gate distance LSG and the gate length LG rather than LG only, and proportional to (LSG+LG)–0.5, which is different from the case of the GaAs or Si FET model. Influence of the source‐gate distance LSG on the DC characteristics of AlGaN/GaN high electron mobility transistors is discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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