DC characteristics and high frequency response of GaN nanowire metal‐oxide‐semiconductor field‐effect transistor

Abstract

AbstractWe report selected site lateral growth of crystalline [11$ \bar 2 $0] GaN nanowire (NW) with high channel mobility of 1050 cm2/V‐s on SiO2/p‐Si. This scheme enables photolithographic fabrication of top‐gated GaN NW‐MOSFET of 60 nm dia. and 2 μm gate length. Device parameters with gm of 25 μS, saturation current of 90 μA, and cut‐off frequency fT at 14 GHz have been extracted. In an active load configuration of GaN NW‐MOSFET inverter we reported voltage gain of 2 and a high current on/off ratio of 104. These observations suggest promising functional diversification of the GaN NW‐MOSFET on the Si‐based CMOS platform for the sub‐50 nm technology nodes. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)