Abstract
the effects of the number of quantum wells (QWs), quantum barrier (QB) thickness, and the operating temperature (up to 500 °C) on the In 0.12 Ga 0.88 N/GaN multi-quantum well solar cell performance are studied via DC and small signal AC analysis. Based on the modelling and experimental results, the short-circuit current density reduces with increasing the QB thickness. However, increasing the number of QWs did not lead to the open-circuit voltage enhancement (mostly due to the material degradation). It was shown that as the number of QWs increases the active region becomes partially depleted, leading to an increase in the carrier recombination and the leakage current.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
