Abstract
Metal-insulator-metal (MIM) capacitors with atomic layer deposited (ALD) various Al 2 O 3 thicknesses are investigated for radio frequency integrated circuit (RFIC) applications. For 20 nm Al 2 O 3 , the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance (VCCs) of 681 ppm/V2 and 134 ppm/V at 1 MHz. An outstanding VCCs of 74 ppm/V2 and 55 ppm/V is obtained by 100 nm thickness Al 2 O 3 MIM capacitors. The impact of various dielectric thicknesses on RF characteristics such as Q factors and resonance frequency is also investigated. Moreover, a simplified small signal model of the MIM capacitors is described. Excellent agreement between measured and simulated data demonstrates the validity of this model.
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