Abstract

Breakdown voltage and RF characteristics relevant for RF power amplifiers (PA) are presented in this paper. Typically, DC collector-to-emitter breakdown voltage with base open (BV CEO ) or DC collector-to-base breakdown with emitter open (BV CBO ) has been presented as the metric for voltage limit of PA devices. In practical PA circuits, the RF envelope voltage can swing well beyond BV CEO without causing a failure. An analysis of output power swing limitations and DC breakdown is presented with attention to biasing and temperature.

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